화학공학소재연구정보센터
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No. Article
1 Teraelectronvolt emission from the gamma-ray burst GRB 190114C
Acciari VA, Ansoldi S, Antonelli LA, Engels AA, Baack D, Babic A, Banerjee B, de Almeida UB, Barrio JA, Gonzalez JB, Bednarek W, Bellizzi L, Bernardini E, Berti A, Besenrieder J, Bhattacharyya W, Bigongiari C, Biland A, Blanch O, Bonnoli G, Bosnjak Z, Busetto G, Carosi A, Carosi R, Ceribella G, Chai Y, Chilingaryan A, Cikota S, Colak SM, Colin U, Colombo E, Contreras JL, Cortina J, Covino S, D'Amico G, D'Elia V, Da Vela P, Dazzi F, De Angelis A, De Lotto B, Delfino M, Delgado J, Depaoli D, Di Pierro F, Di Venere L, Espineira ED, Prester DD, Donini A, Dorner D, Doro M, Elsaesser D, Ramazani VF, Fattorini A, Fernandez-Barral A, Ferrara G, Fidalgo D, Foffano L, Fonseca MV, Font L, Fruck C, Fukami S, Gallozzi S, Lopez RJG, Garczarczyk M, Gasparyan S, Gaug M, Giglietto N, Giordano F, Godinovic N, Green D, Guberman D, Hadasch D, Hahn A, Herrera J, Hoang J, Hrupec D, Hutten M, Inada T, Inoue S, Ishio K, Iwamura Y, Jouvin L, Kerszberg D, Kubo H, Kushida J, Lamastra A, Lelas D, Leone F, Lindfors E, Lombardi S, Longo F, Lopez M, Lopez-Coto R, Lopez-Oramas A, Loporchio S, Fraga BMD, Maggio C, Majumdar P, Makariev M, Mallamaci M, Maneva G, Manganaro M, Mannheim K, Maraschi L, Mariotti M, Martinez M, Masuda S, Mazin D, Micanovic S, Miceli D, Minev M, Miranda JM, Mirzoyan R, Molina E, Moralejo A, Morcuende D, Moreno V, Moretti E, Munar-Adrover P, Neustroev V, Nigro C, Nilsson K, Ninci D, Nishijima K, Noda K, Nogues L, Nothe M, Nozaki S, Paiano S, Palacio J, Palatiello M, Paneque D, Paoletti R, Paredes JM, Penil P, Peresano M, Persic M, Moroni PGP, Prandini E, Puljak I, Rhode W, Ribo M, Rico J, Righi C, Rugliancich A, Saha L, Sahakyan N, Saito T, Sakurai S, Satalecka K, Schmidt K, Schweizer T, Sitarek J, Snidaric I, Sobczynska D, Somero A, Stamerra A, Strom D, Strzys M, Suda Y, Suric T, Takahashi M, Tavecchio F, Temnikov P, Terzic T, Teshima M, Torres-Alba N, Tosti L, Tsujimoto S, Vagelli V, van Scherpenberg J, Vanzo G, Acosta MV, Vigorito CF, Vitale V, Vovk I, Will M, Zaric D, Nava L
Nature, 575(7783), 455, 2019
2 Observation of inverse Compton emission from a long gamma-ray burst
Veres P, Acciari VA, Ansoldi S, Antonelli LA, Engels AA, Baack D, Babic A, Banerjee B, de Almeida UB, Barrio JA, Gonzalez JB, Bednarek W, Bellizzi L, Bernardini E, Berti A, Besenrieder J, Bhattacharyya W, Bigongiari C, Biland A, Blanch O, Bonnoli G, Bosnjak Z, Busetto G, Carosi R, Ceribella G, Chai Y, Chilingaryan A, Cikota S, Colak SM, Colin U, Colombo E, Contreras JL, Cortina J, Covino S, D'Elia V, Da Vela P, Dazzi F, De Angelis A, De Lotto B, Delfino M, Delgado J, Depaoli D, Di Pierro F, Di Venere L, Espineira EDS, Prester DD, Donini A, Dorner D, Doro M, Elsaesser D, Ramazani VF, Fattorini A, Ferrara G, Fidalgo D, Foffano L, Fonseca MV, Font L, Fruck C, Fukami S, Lopez RJG, Garczarczyk M, Gasparyan S, Gaug M, Giglietto N, Giordano F, Godinovic N, Green D, Guberman D, Hadasch D, Hahn A, Herrera J, Hoang J, Hrupec D, Hutten M, Inada T, Inoue S, Ishio K, Iwamura Y, Jouvin L, Kerszberg D, Kubo H, Kushida J, Lamastra A, Lelas D, Leone F, Lindfors E, Lombardi S, Longo F, Lopez M, Lopez-Coto R, Lopez-Oramas A, Loporchio S, Fraga BMDO, Maggio C, Majumdar P, Makariev M, Mallamaci M, Maneva G, Manganaro M, Mannheim K, Maraschi L, Mariotti M, Martinez M, Mazin D, Micanovic S, Miceli D, Minev M, Miranda JM, Mirzoyan R, Molina E, Moralejo A, Morcuende D, Moreno V, Moretti E, Munar-Adrover P, Neustroev V, Nigro C, Nilsson K, Ninci D, Nishijima K, Noda K, Nogues L, Nozaki S, Paiano S, Palatiello M, Paneque D, Paoletti R, Paredes JM, Penil P, Peresano M, Persic M, Moroni PGP, Prandini E, Puljak I, Rhode W, Ribo M, Rico J, Righi C, Rugliancich A, Saha L, Sahakyan N, Saito T, Sakurai S, Satalecka K, Schmidt K, Schweizer T, Sitarek J, Snidaric I, Sobczynska D, Somero A, Stamerra A, Strom D, Strzys M, Suda Y, Suric T, Takahashi M, Tavecchio F, Temnikov P, Terzic T, Teshima M, Torres-Alba N, Tosti L, Vagelli V, van Scherpenberg J, Vanzo G, Acosta MV, Vigorito CF, Vitale V, Vovk I, Will M, Zaric D, Nava L, Veres P, Bhat PN, Briggs MS, Cleveland WH, Hamburg R, Hui CM, Mailyan B, Preece RD, Roberts OJ, Kienlin A, Wilson-Hodge CA, Kocevski D, Arimoto M, Tak D, Asano K, Axelsson M, Barbiellini G, Bissaldi E, Dirirsa FF, Gill R, Granot J, McEnery J, Omodei N, Razzaque S, Piron F, Racusin JL, Thompson DJ, Campana S, Bernardini MG, Kuin NPM, Siegel MH, Cenko B, O'Brien P, Capalbi M, Dai A, De Pasquale M, Gropp J, Klingler N, Osborne P, Perri M, Starling RLC, Tagliaferri G, Tohuvavohu A, Ursi A, Tavani M, Cardillo M, Casentini C, Piano G, Evangelista Y, Verrecchia F, Pittori C, Lucarelli F, Bulgarelli A, Parmiggiani N, Anderson GE, Anderson JP, Bernardi G, Bolmer J, Caballero-Garcia MD, Carrasco IM, Castellon A, Segura NC, Castro-Tirado AJ, Cherukuri SV, Cockeram AM, D'Avanzo P, Di Dato A, Diretse R, Fender RP, Fernandez-Garcia E, Fynbo JPU, Fruchter AS, Greiner J, Gromadzki M, Heintz KE, Heywood I, van der Horst AJ, Hu YD, Inserra C, Izzo L, Jaiswal V, Jakobsson P, Japelj J, Kankare E, Kann DA, Kouveliotou C, Klose S, Levan AJ, Li XY, Lotti S, Maguire K, Malesani DB, Manulis I, Marongiu M, Martin S, Melandri A, Michalowski MJ, Miller-Jones JCA, Misra K, Moin A, Mooley KP, Nasri S, Nicholl M, Noschese A, Novara G, Pandey SB, Peretti E, del Pulgar CJP, Perez-Torres MA, Perley DA, Piro L, Ragosta F, Resmi L, Ricci R, Rossi A, Sanchez-Ramirez R, Selsing J, Schulze S, Smartt SJ, Smith IA, Sokolov VV, Stevens J, Tanvir NR, Thone CC, Tiengo A, Tremou E, Troja E, Postigo AD, Valeev AF, Vergani SD, Wieringa M, Woudt PA, Xu D, Yaron O, Young DR
Nature, 575(7783), 459, 2019
3 FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration
Fenouillet-Beranger C, Previtali B, Batude P, Nemouchi F, Casse M, Garros X, Tosti L, Rambal N, Lafond D, Dansas H, Pasini L, Brunet L, Deprat F, Gregoire M, Mellier M, Vinet M
Solid-State Electronics, 113, 2, 2015
4 Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs
Koyama M, Casse M, Coquand R, Barraud S, Vizioz C, Comboroure C, Perreau P, Maffini-Alvaro V, Tabone C, Tosti L, Barnola S, Delaye V, Aussenac F, Ghibaudo G, Iwai H, Reimbold G
Solid-State Electronics, 84, 46, 2013
5 Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: to Single Electron Transistor
Deshpande V, Barraud S, Jehl X, Wacquez R, Vinet M, Coquand R, Roche B, Voisin B, Triozon F, Vizioz C, Tosti L, Previtali B, Perreau P, Poiroux T, Sanquer M, Faynot O
Solid-State Electronics, 84, 179, 2013
6 Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F
Solid-State Electronics, 88, 15, 2013
7 Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution
Nguyen P, Andrieu F, Casse M, Tabone C, Perreau P, Lafond D, Dansas H, Tosti L, Veytizou C, Landru D, Kononchuk O, Guiot E, Nguyen BY, Faynot O, Poiroux T
Solid-State Electronics, 90, 39, 2013
8 Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
Fenouillet-Beranger C, Perreau P, Boulenc P, Tosti L, Barnola S, Andrieu F, Weber O, Beneyton R, Perrot C, de Buttet C, Abbate F, Campidelli Y, Pinzelli L, Gouraud P, Margain A, Peru S, Bourdelle KK, Nguyen BY, Boedt F, Poiroux T, Faynot O, Skotnicki T, Boeuf F
Solid-State Electronics, 74, 32, 2012
9 Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below
Fenouillet-Beranger C, Perreau P, Denorme S, Tosti L, Andrieu F, Weber O, Monfray S, Barnola S, Arvet C, Campidelli Y, Haendler S, Beneyton R, Perrot C, de Buttet C, Gros P, Pham-Nguyen L, Leverd F, Gouraud P, Abbate F, Baron F, Torres A, Laviron C, Pinzelli L, Vetier J, Borowiak C, Margain A, Delprat D, Boedt F, Bourdelle K, Nguyen BY, Faynot O, Skotnicki T
Solid-State Electronics, 54(9), 849, 2010
10 FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
Fenouillet-Beranger C, Denorme S, Perreau P, Buj C, Faynot O, Andrieu F, Tosti L, Barnola S, Salvetat T, Garros X, Casse M, Allain F, Loubet N, Pham-Nguyen L, Deloffre E, Gros-Jean M, Beneyton R, Laviron C, Marin M, Leyris C, Haendler S, Leverd F, Gouraud P, Scheiblin P, Clement L, Pantel R, Deleonibus S, Skotnicki T
Solid-State Electronics, 53(7), 730, 2009