검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy Chen YL, Lo IA, Gau MH, Hsieh CH, Sham MW, Pang WY, Hsu YC, Tsai JK, Schuber R, Schaadt D Thin Solid Films, 520(19), 6134, 2012 |
| 2 |
Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy Huang JH, Hsieh KY, Tsai JK, Huang HL, Hsieh CH, Lee YC, Chuang KL, Lo I, Tu LW Journal of Crystal Growth, 263(1-4), 301, 2004 |