1 |
Dark ambient degradation of Bisphenol A and Acid Orange 8 as organic pollutants by perovskite SrFeO3-delta metal oxide Leiw MY, Guai GH, Wang X, Tse MS, Ng CM, Tan OK Journal of Hazardous Materials, 260, 1, 2013 |
2 |
Oxygen-sensing property of sol-gel-derived SrTi1-xFexO3-delta thin films with different iron concentrations (x=0.2-0.8) Chow CL, Ang WC, Tse MS, Tan OK Thin Solid Films, 542, 393, 2013 |
3 |
Photocatalytic activity of tin-doped TiO2 film deposited via aerosol assisted chemical vapor deposition Chua CS, Tan OK, Tse MS, Ding XZ Thin Solid Films, 544, 571, 2013 |
4 |
Low-Temperature Growth of SnO2 Nanorod Arrays and Tunable n-p-n Sensing Response of a ZnO/SnO2 Heterojunction for Exclusive Hydrogen Sensors Huang H, Gong H, Chow CL, Guo J, White TJ, Tse MS, Tan OK Advanced Functional Materials, 21(14), 2680, 2011 |
5 |
Effect of ball milling on the characteristics of nano structure SrFeO3 powder for photocatalytic degradation of methylene blue under visible light irradiation and its reaction kinetics Ghaffari M, Tan PY, Oruc ME, Tan OK, Tse MS, Shannon M Catalysis Today, 161(1), 70, 2011 |
6 |
Preparation and characterization of nanocrystalline SnO2 thin films by PECVD Huang H, Tan OK, Lee YC, Tse MS Journal of Crystal Growth, 288(1), 70, 2006 |
7 |
Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures Ng CY, Chen TP, Liu Y, Tse MS, Gui D Electrochemical and Solid State Letters, 8(1), G8, 2005 |
8 |
Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide Liu Y, Chen TP, Ng CY, Tse MS, Fung S, Liu YC, Li S, Zhao P Electrochemical and Solid State Letters, 7(7), G134, 2004 |
9 |
Core-level shift of Si nanocrystals embedded in a SiO2 matrix Chen TP, Liu Y, Sun CQ, Tse MS, Hsieh JH, Fu YQ, Liu YC, Fung S Journal of Physical Chemistry B, 108(43), 16609, 2004 |
10 |
A novel approach to quantitative determination of charge trapping near channel/drain edge in MOSFETs Chen TP, Huang JY, Tse MS, Zeng X Solid-State Electronics, 46(11), 2013, 2002 |