검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Partial dislocations and stacking faults in 4H-SiC PiN diodes Twigg ME, Stahlbush RE, Fatemi M, Arthur SD, Fedison JB, Tucker JB, Wang S Materials Science Forum, 457-460, 537, 2004 |
| 2 |
Microwave power SiC MESFETs and GaNHEMTs Zhang AP, Rowland LB, Kaminsky EB, Kretchmer JW, Beaupre RA, Garrett JL, Tucker JB, Edward BJ, Foppes J, Allen AF Solid-State Electronics, 47(5), 821, 2003 |
| 3 |
Characteristics of MESFETs made by ion-implantation in bulk semi-insulating 4H-SiC Mitra S, Tucker JB, Rao MV, Papanicolaou N, Jones KA Materials Science Forum, 389-3, 1391, 2002 |
| 4 |
Characteristics of n-p junction diodes made by double-implantations into SiC Tucker JB, Handy EM, Rao MV, Holland OW, Papanicolaou N, Jones KA Materials Science Forum, 338-3, 925, 2000 |
| 5 |
Highly durable SiC nMISFET's at 450 degrees C Zhu WJ, Wang XW, Ma TP, Tucker JB, Rao MV Materials Science Forum, 338-3, 1311, 2000 |