검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Effect of rapid thermal annealing on MgxZn1-xO films prepared by radio-frequency magnetron sputtering Hsueh KP, Tun CJ, Chiu HC, Huang YP, Chi GC Journal of Vacuum Science & Technology B, 28(4), 720, 2010 |
| 2 |
Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers Fu YK, Kuo CH, Tun CJ, Chang LC Solid-State Electronics, 54(5), 590, 2010 |
| 3 |
Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition Kuo CW, Fu YK, Kuo CH, Chang LC, Tun CJ, Pan CJ, Chi GC Journal of Crystal Growth, 311(2), 249, 2009 |
| 4 |
Growth and characterization of c-plane AlGaN on gamma-LiAlO2 Tun CJ, Kuo CH, Fu YK, Kuo CW, Chou MMC, Chi GC Journal of Crystal Growth, 311(14), 3726, 2009 |
| 5 |
Improvement of the Efficiency of Nitride-Based Light Emitting Diodes on Nanoinverted Pyramid GaN Templates Kuo CH, Chang LC, Kuo CW, Tun CJ Journal of the Electrochemical Society, 156(12), H986, 2009 |
| 6 |
Evolution of surface morphology of dry-etched ZnO with Cl-2/Ar plasma Hsueh KP, Hou RJ, Tun CJ Journal of Vacuum Science & Technology B, 27(5), 2187, 2009 |
| 7 |
Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer Kuo CH, Yeh CL, Chen PH, Lai WC, Tun CJ, Sheu JK, Chi GC Electrochemical and Solid State Letters, 11(9), H269, 2008 |
| 8 |
Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition Fu YK, Kuo CH, Tun CJ, Kuo CW, Lai WC, Chi GC, Pan CJ, Chen MC, Hong HF, Lan SM Journal of Crystal Growth, 310(20), 4456, 2008 |
| 9 |
Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0001) Pan CJ, Tu CW, Tun CJ, Lee CC, Chi GC Journal of Crystal Growth, 305(1), 133, 2007 |
| 10 |
Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering Sheu JK, Shu KW, Lee ML, Tun CJ, Chi GC Journal of the Electrochemical Society, 154(6), H521, 2007 |