화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Titanium nitride promoted Ni-based SBA-15 catalyst for dry reforming of methane
Chotirach M, Tungasmita S, Tungasmita DN, Tantayanon S
International Journal of Hydrogen Energy, 43(46), 21322, 2018
2 Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide
Taweesup K, Yamamoto I, Chikyow T, Lothongkum G, Tsukagoshi K, Ohishi T, Tungasmita S, Visuttipitukul P, Ito K, Takahashi M, Nabatame T
Thin Solid Films, 598, 126, 2016
3 Silver ions and silver nanoparticles in zeolite A composites for antibacterial activity
Jiraroj D, Tungasmita S, Tungasmita DN
Powder Technology, 264, 418, 2014
4 Zr-based intermetallic diffusion barriers for stainless steel supported palladium membranes
Chotirach M, Tantayanon S, Tungasmita S, Kriausakul K
Journal of Membrane Science, 405, 92, 2012
5 Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE
Kaewket D, Tungasmita S, Sanorpim S, Nakajima F, Nakadan N, Kimura T, Katayama R, Onabe K
Journal of Crystal Growth, 298, 531, 2007
6 Growth of epitaxial (SiC)(x)(AlN)(1-x) thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition
Tungasmita S, Persson POA, Seppanen T, Hultman L, Birch J
Materials Science Forum, 389-3, 1481, 2002
7 Growth and characterization of epitaxial wurtzite Al1-xInxN thin films deposited by UHV reactive dual DC magnetron sputtering
Seppanen T, Radnoczi GZ, Tungasmita S, Hultman L, Birch J
Materials Science Forum, 433-4, 987, 2002
8 Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
Paskova T, Valcheva E, Birch J, Tungasmita S, Persson POA, Paskov PP, Evtimova S, Abrashev M, Monemar B
Journal of Crystal Growth, 230(3-4), 381, 2001
9 Low-energy-ion-assisted reactive sputter deposition of epitaxial AlN thin films on 6H-SiC
Tungasmita S, Persson POA, Jarrendahl K, Hultman L, Birch J
Materials Science Forum, 338-3, 1519, 2000