| 1 |
ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell
Bethge O, Nobile M, Abermann S, Glaser M, Bertagnolli E
Solar Energy Materials and Solar Cells, 117, 178, 2013 |
| 2 |
Enhanced tunneling properties of band-engineered (HfO2)(x)(SiO2)(1-x)/SiO2 double dielectric layers for non-volatile flash memory device
Heo MY, Kim J, Kang HY, Oh J, Lee K, Sohn H
Current Applied Physics, 11(2), E16, 2011 |
| 3 |
Multi-layer stacked OHA and AHA tunnel barriers for charge trap flash non-volatile memory application
Son JW, You HW, Cho WJ
Current Applied Physics, 11(2), E10, 2011 |
| 4 |
Improved characteristics for Pd nanocrystal memory with stacked HfAlO-SiO2 tunnel layer
Kang TK, Liu HW, Wang FH, Lin CL, Liao TC, Wu WF
Solid-State Electronics, 61(1), 100, 2011 |
| 5 |
Electrical characteristics of a ZrO2/SiO2 modified tunnel barrier for low-temperature non-volatile memory
You HW, Cho WJ
Thin Solid Films, 519(10), 3397, 2011 |
| 6 |
Barrier engineering in metal-aluminum oxide-nitride-oxide-silicon (MANOS) flash memory: Invited
Kang CY
Current Applied Physics, 10(1), E27, 2010 |
| 7 |
Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier
Kang HY, Heo MY, Sohn HC
Current Applied Physics, 10(1), E22, 2010 |
| 8 |
Tunneling barrier engineered charge trap. ash memory with ONO and NON tunneling dielectric layers
Park GH, Jung MH, Kim KS, Chung HB, Cho WJ
Current Applied Physics, 10(1), E13, 2010 |
| 9 |
Electrical properties of WSi2 nanocrystal memory with SiO2/Si3N4/SiO2 tunnel barriers
Seo KB, Lee DU, Han SJ, Kim EK, You HW, Cho WJ
Current Applied Physics, 10(1), E5, 2010 |
| 10 |
2단계 AlO x 절연층 공정에서 하부절연층의 산화시간에 따른 터널자기저항 특성연구
이영민, 송오성
Korean Journal of Materials Research, 12(3), 200, 2002 |
