검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Evolution of impurity incorporation during ammonothermal growth of GaN Sintonen S, Wahl S, Richter S, Meyer S, Suihkonen S, Schulz T, Irmscher K, Danilewsky AN, Tuomi TO, Stankiewicz R, Albrecht M Journal of Crystal Growth, 456, 51, 2016 |
| 2 |
Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers Lankinen A, Tuomi TO, Kostamo P, Jussila H, Sintonen S, Lipsanen H, Tilli M, Makinen J, Danilewsky AN Thin Solid Films, 603, 435, 2016 |
| 3 |
Defect structure of a free standing GaN wafer grown by the ammonothermal method Sintonen S, Suihkonen S, Jussila H, Lipsanen H, Tuomi TO, Letts E, Hoff S, Hashimoto T Journal of Crystal Growth, 406, 72, 2014 |
| 4 |
Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography Jussila H, Nagarajan S, Sintonen S, Suihkonen S, Lankinen A, Huhtio T, Paulmann C, Lipsanen H, Tuomi TO, Sopanen M Thin Solid Films, 534, 680, 2013 |
| 5 |
Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge Lankinen A, Knuuttila L, Kostamo P, Tuomi TO, Lipsanen H, McNally PJ, O'Reilly L Journal of Crystal Growth, 311(22), 4619, 2009 |