검색결과 : 21건
No. | Article |
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1 |
PREFACE Freitas JA, Tuomisto F, Pimputkar S Journal of Crystal Growth, 501, 82, 2018 |
2 |
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Cordier Y, Damilano B, Aing P, Chaix C, Linez F, Tuomisto F, Vennegues P, Frayssinet E, Lefebvre D, Portail M, Nemoz M Journal of Crystal Growth, 433, 165, 2016 |
3 |
Pick-Off Annihilation of Positronium in Matter Using Full Correlation Single Particle Potentials: Solid He Zubiaga A, Tuomisto F, Puska MJ Journal of Physical Chemistry B, 119(4), 1747, 2015 |
4 |
Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers Madia O, Nguyen APD, Thoan NH, Afanas'ev V, Stesmans A, Souriau L, Slotte J, Tuomisto F Applied Surface Science, 291, 11, 2014 |
5 |
Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD Sarkijarvi S, Sintonen S, Tuomisto F, Bosund M, Suihkonen S, Lipsanen H Journal of Crystal Growth, 398, 18, 2014 |
6 |
Growth, characterization and study of ferromagnetism of bismuth telluride doped with manganese Fedorchenko IV, Marenkin SF, Avdonin A, Domukhovski V, Dobrowolski W, Heikinheimo J, Korhonen E, Tuomisto F Journal of Crystal Growth, 401, 636, 2014 |
7 |
Vacancy-hydrogen complexes in ammonothermal GaN Tuomisto F, Kuittinen T, Zajac M, Doradzinski R, Wasik D Journal of Crystal Growth, 403, 114, 2014 |
8 |
On the formation of vacancy defects in III-nitride semiconductors Tuomisto F, Maki JM, Rauch C, Makkonen I Journal of Crystal Growth, 350(1), 93, 2012 |
9 |
Tailoring the Chain Packing in Ultrathin Polyelectrolyte Films Formed by Sequential Adsorption: Nanoscale Probing by Positron Annihilation Spectroscopy Quinn JF, Pas SJ, Quinn A, Yap HP, Suzuki R, Tuomisto F, Shekibi BS, Mardel JI, Hill AJ, Caruso F Journal of the American Chemical Society, 134(48), 19808, 2012 |
10 |
Vacancy defects in bulk ammonothermal GaN crystals Tuomisto F, Maki JM, Zajac M Journal of Crystal Growth, 312(18), 2620, 2010 |