화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Structural characteristics of m-plane AlN substrates and homoepitaxial films
Graziano MB, Bryan I, Bryan Z, Kirste R, Tweedie J, Collazo R, Sitar Z
Journal of Crystal Growth, 507, 389, 2019
2 Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
Bryan I, Bryan Z, Mita S, Rice A, Tweedie J, Collazo R, Sitar Z
Journal of Crystal Growth, 438, 81, 2016
3 The role of surface kinetics on composition and quality of AlGaN
Bryan I, Bryan Z, Mita S, Rice A, Hussey L, Shelton C, Tweedie J, Maria JP, Collazo R, Sitar Z
Journal of Crystal Growth, 451, 65, 2016
4 Comparative study of etching high crystalline quality AlN and GaN
Guo W, Xie J, Akouala C, Mita S, Rice A, Tweedie J, Bryan I, Collazo R, Sitar Z
Journal of Crystal Growth, 366, 20, 2013
5 Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
Dalmau R, Moody B, Schlesser R, Mita S, Xie J, Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Tweedie J, Sitar Z
Journal of the Electrochemical Society, 158(5), H530, 2011
6 Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE
Rice A, Collazo R, Tweedie J, Xie J, Mita S, Sitar Z
Journal of Crystal Growth, 312(8), 1321, 2010