검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Misfit dislocation formation in p/p(+) silicon vapor-phase epitaxy Fukuto H, Feichtinger P, U'Ren GD, Lindo S, Goorsky MS, Magee T, Oster D, Moreland J Journal of Crystal Growth, 209(4), 716, 2000 |
| 2 |
Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1-xGex/Si(100) grown by gas-source molecular beam epitaxy U'Ren GD, Goorsky MS, Wang KL Thin Solid Films, 365(1), 147, 2000 |
| 3 |
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs Sandhu RS, Bhasin G, Moore CD, U'Ren GD, Goorsky MS, Chin TP, Wojtowicz M, Block TR, Streit DC Journal of Vacuum Science & Technology B, 17(3), 1163, 1999 |
| 4 |
Analysis of lattice distortions in high-quality InGaAsP epitaxial overgrowth of rectangular-patterned INP gratings U'Ren GD, Goorsky MS, Koontz EM, Lim MH, Petrich GS, Kolodziejski LA, Wong VV, Smith HI, Matney KM, Wormington M Journal of Vacuum Science & Technology B, 16(3), 1381, 1998 |