| 1 |
Enhanced Light Output of GaN-Based Vertical Light-Emitting Diodes with Superimposed Circular Protrusions and Hexagonal Cones
Lee WC, Wang SJ, Uang KM, Chen TM, Kuo DM, Wang PR, Wang PH
Electrochemical and Solid State Letters, 14(2), H53, 2011 |
| 2 |
Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughened by SiO2 Nanotube Arrays
Kuo DM, Wang SJ, Uang KM, Chen TM, Lee WC, Wang PR
Electrochemical and Solid State Letters, 14(2), H66, 2011 |
| 3 |
The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement
Uang KM, Wang SJ, Chen SL, Chen TM, Liou BW
Thin Solid Films, 515(4), 2501, 2006 |
| 4 |
Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations
Chang SC, Wang SJ, Uang KM, Liou BW
Solid-State Electronics, 49(3), 437, 2005 |
| 5 |
Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC
Chang SC, Wang SJ, Uang KM, Liou BW
Solid-State Electronics, 49(12), 1937, 2005 |
