검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE Umeno K, Furukawa Y, Urakami N, Mitsuyoshi S, Yonezu H, Wakahara A Journal of Crystal Growth, 312(2), 231, 2010 |
| 2 |
MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates Umeno K, Furukawa Y, Wakahara A, Noma R, Okada H, Yonezu H, Takagi Y, Kan H Journal of Crystal Growth, 311(7), 1748, 2009 |
| 3 |
Band alignments of InGaPN/GaPN quantum well structures on GaP and Si Umeno K, Kim SM, Furukawa Y, Yonezu H, Wakahara A Journal of Crystal Growth, 301, 539, 2007 |
| 4 |
MBE growth of highly strained InGaPN/GaPN quantum well with high indium content Kim SM, Furukawa Y, Yonezu H, Umeno K, Wakahara A Journal of Crystal Growth, 293(2), 359, 2006 |