검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy Agrawal M, Dharmarasu N, Radhakrishnan K, Ravikiran L Thin Solid Films, 520(24), 7109, 2012 |
| 2 |
Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE Panpech P, Vijarnwannaluk S, Sanorpim S, Ono W, Nakajima F, Katayama R, Onabe K Journal of Crystal Growth, 298, 107, 2007 |
| 3 |
Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation Klangtakai P, Sanorpim S, Yoodee K, Ono W, Nakajima F, Katayama R, Onabe K Journal of Crystal Growth, 298, 140, 2007 |
| 4 |
MOVPE and characterization of InAsN/GaAs multiple quantum wells Kuboya S, Thieu QT, Ono W, Nakajima F, Katayama R, Onabe K Journal of Crystal Growth, 298, 544, 2007 |
| 5 |
A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition Yu H, Ozturk MK, Ozcelik S, Ozbay E Journal of Crystal Growth, 293(2), 273, 2006 |
| 6 |
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN grown on silicon Lee YC, Hassan Z, Yam FK, Abdullah MJ, Ibrahim K, Barmawi M, Sugianto, Budiman M, Arifin P Applied Surface Science, 249(1-4), 91, 2005 |
| 7 |
Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures Polimeni A, Bissiri M, von Hogersthal GBH, Capizzi M, Giubertoni D, Barozzi M, Bersani M, Gollub D, Fischer M, Forchel A Solid-State Electronics, 47(3), 447, 2003 |
| 8 |
Polarization fields in nitride nanostructures: 10 points to think about Bernardini F, Fiorentini V Applied Surface Science, 166(1-4), 23, 2000 |
| 9 |
Investigation of preparation and properties of epitaxial growth GaN film on Si(111) substrate Zhang HX, Ye ZZ, Zhao BH Journal of Crystal Growth, 210(4), 511, 2000 |
| 10 |
Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry Smith SA, Lampert WV, Rajagopal P, Banks AD, Thomson D, Davis RF Journal of Vacuum Science & Technology A, 18(3), 879, 2000 |