| 1 |
Stack optimization of oxide-based RRAM for fast write speed (< 1 mu s) at low operating current (< 10 mu A)
Chen CY, Goux L, Fantini A, Degraeve R, Redolfi A, Groeseneken G, Jurczak M
Solid-State Electronics, 125, 198, 2016 |
| 2 |
50 nm AlxOy ReRAM program 31% energy, 1.6x endurance, and 3.6x speed improvement by advanced cell condition adaptive verify-reset
Ning SY, Iwasak TO, Takeuchi K
Solid-State Electronics, 103, 64, 2015 |
| 3 |
Array-level stability enhancement of 50 nm AlxOy ReRAM
Iwasaki TO, Ning SY, Yamazawa H, Takeuchi K
Solid-State Electronics, 114, 1, 2015 |
| 4 |
Modeling and Docking Studies on Novel Mutants (K71L and T204V) of the ATPase Domain of Human Heat Shock 70 kDa Protein 1
Elengoe A, Abu Naser M, Hamdan S
International Journal of Molecular Sciences, 15(4), 6797, 2014 |
| 5 |
Evaluation of voltage vs. pulse width modulation and feedback during set/reset verify-programming to achieve 10 million cycles for 50 nm HfO2 ReRAM
Higuchi K, Takeuchi K, Iwasaki TO
Solid-State Electronics, 91, 67, 2014 |
| 6 |
Deterministic identifiability of photophysical kinetic models with transients via the method of similarity transformation
Molski A, Boens N
Journal of Chemical Physics, 110(3), 1628, 1999 |
