1 |
Comparative study of the effects of phosphorus and boron doping in vapor-liquid-solid growth with fixed flow of silicon gas Islam MS, Mehedi IM Journal of Crystal Growth, 440, 55, 2016 |
2 |
Growth and morphology control of beta-Ga2O3 nanostructures by atmospheric-pressure CVD Terasako T, Kawasaki Y, Yagi M Thin Solid Films, 620, 23, 2016 |
3 |
Interface pn junction arrays with high yielded grown p-Si microneedles by vapor-liquid-solid method at low temperature Islam MS, Ishida M Solid-State Electronics, 103, 90, 2015 |
4 |
High-yield growth of p-Si microprobe arrays by selective vapor-liquid-solid method using in situ doping and their properties Islam MS, Kawashima T, Sawada K, Ishida M Journal of Crystal Growth, 306(2), 276, 2007 |
5 |
Effect of diborane on the microstructure of boron-doped silicon nanowires Pan L, Lew KK, Redwing JM, Dickey EC Journal of Crystal Growth, 277(1-4), 428, 2005 |
6 |
P-type SiC layers formed by VLS induced selective epitaxial growth Lazar M, Jacquier C, Dubois C, Raynaud C, Ferro G, Planson D, Brosselard P, Monteil Y, Chante JP Materials Science Forum, 483, 633, 2005 |
7 |
Synthesis of boride, carbide, and carbonitride whiskers Johnsson M Solid State Ionics, 172(1-4), 365, 2004 |
8 |
The application of VLS growth technique to bulk semiconductors Yashina LV, Shtanov VI, Yanenko ZG Journal of Crystal Growth, 252(1-3), 68, 2003 |
9 |
The growth mechanism of silicon nanowires and their quantum confinement effect Feng SQ, Yu DP, Zhang HZ, Bai ZG, Ding Y Journal of Crystal Growth, 209(2-3), 513, 2000 |
10 |
Growth and characterization of TiC nanorods activated by nickel nanoparticles Liang CH, Meng GW, Chen W, Wang YW, Zhang LD Journal of Crystal Growth, 220(3), 296, 2000 |