검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Influence of the plasma oxidation power on the switching properties of Al/CuxO/Cu memristive devices McDonald NR, Bishop SM, Briggs BD, Van Nostrand JE, Cady NC Solid-State Electronics, 78, 46, 2012 |
| 2 |
Epitaxial overgrowth of GaN nanocolumns Averett KL, Van Nostrand JE, Albrecht JD, Chen YS, Yang CC Journal of Vacuum Science & Technology B, 25(3), 964, 2007 |
| 3 |
Molecular beam epitaxial growth of high-quality GaN nanocolumns Van Nostrand JE, Averett KL, Cortez R, Boeckl J, Stutz CE, Sanford NA, Davydov AV, Albrecht JD Journal of Crystal Growth, 287(2), 500, 2006 |
| 4 |
Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy Jessen GH, White BD, Bradley ST, Smith PE, Brillson LJ, Van Nostrand JE, Fitch R, Via GD, Gillespie JK, Dettmer RW, Sewell JS Solid-State Electronics, 46(9), 1427, 2002 |
| 5 |
Optical investigation of MBE grown Si-doped AlxGa1-xN as a function of nominal Al mole fraction up to 0.5 McFall JL, Hengehold RL, Yeo YK, Van Nostrand JE, Saxler AW Journal of Crystal Growth, 227, 458, 2001 |
| 6 |
Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy Xie QH, Van Nostrand JE Journal of Vacuum Science & Technology A, 17(2), 342, 1999 |