검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Modifications of the 3-Dimensional Transport-Properties of Si-Doped Al0.25Ga0.75As Exposed to CH4/H-2 Reactive Ion Etching Pereira RG, Vanhove M, Vanrossum M Journal of Vacuum Science & Technology B, 14(1), 106, 1996 |
| 2 |
Influence of CH4/H-2 Reactive Ion Etching on the Deep Levels of Si-Doped AlxGa1-xAs (X=0.25) Pereira RG, Vanhove M, Depotter M, Vanrossum M Journal of Vacuum Science & Technology B, 14(3), 1773, 1996 |
| 3 |
Optimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H-2 by the Experimental-Design Method Carpi EL, Vanhove M, Alay JL, Vanrossum M Journal of Vacuum Science & Technology B, 13(3), 895, 1995 |