검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation Kikuchi Y, Hopf T, Mannaert G, Everaert JL, Kubicek S, Eyben P, Waite A, Borniquel JID, Variam N, Mocuta D, Horiguchi N Solid-State Electronics, 152, 58, 2019 |
| 2 |
Strained n-Channel Field-Effect Transistors with Channel Proximate Silicon-Carbon Source/Drain Stressors for Performance Enhancement Koh SM, Wong HS, Gong XA, Ng CM, Variam N, Henry T, Erokhin Y, Samudra GS, Yeo YC Journal of the Electrochemical Society, 157(12), II1088, 2010 |