검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures Ramvall P, Wang CH, Astromskas G, Vellianitis G, Holland M, Droopad R, Samuelson L, Wernersson LE, Passlack M, Diaz CH Journal of Crystal Growth, 374, 43, 2013 |
| 2 |
Growth of heterostructures on InAs for high mobility device applications Contreras-Guerrero R, Wang S, Edirisooriya M, Priyantha W, Rojas-Ramirez JS, Bhuwalka K, Doornbos G, Holland M, Oxland R, Vellianitis G, Van Dal M, Duriez B, Passlack M, Diaz CH, Droopad R Journal of Crystal Growth, 378, 117, 2013 |
| 3 |
High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates Vellianitis G, van Dal MJH, Duriez B, Lee TL, Passlack M, Wann CH, Diaz CH Journal of Crystal Growth, 383, 9, 2013 |
| 4 |
Improved effective mobility extraction in MOSFETs Thomas SM, Whall TE, Parker EHC, Leadley DR, Lander RJP, Vellianitis G, Watling JR Solid-State Electronics, 53(12), 1252, 2009 |
| 5 |
Effects on surface morphology of epitaxial Y2O3 layers on Si(001) after postgrowth annealing Ioannou-Sougleridis V, Constantoudis V, Alexe M, Scholz R, Vellianitis G, Dimoulas A Thin Solid Films, 468(1-2), 303, 2004 |