화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 Nanobeam Diffraction: Technique Evaluation and Strain Measurement on Complementary Metal Oxide Semiconductor Devices
Favia P, Gonzales MB, Simoen E, Verheyen P, Klenov D, Bender H
Journal of the Electrochemical Society, 158(4), H438, 2011
2 Stability of silicon germanium stressors
Tomasini P, Machkaoutsan V, Thomas SG, Loo R, Caymax M, Verheyen P
Thin Solid Films, 518, S133, 2010
3 Leakage current study of Si1-xCx embedded source/drain junctions
Simoen E, Vissouvanadin B, Taleb N, Gonzalez MB, Verheyen P, Loo R, Claeys C, Machkaoutsan V, Bauer M, Thomas S, Lu JP, Wise R
Applied Surface Science, 254(19), 6140, 2008
4 Reduced self-heating by strained silicon substrate engineering
O'Neill A, Agaiby R, Olsen S, Yang Y, Hellstrom PE, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E
Applied Surface Science, 254(19), 6182, 2008
5 Multi-gate devices for the 32 nm technology node and beyond
Collaert N, De Keersgieter A, Dixit A, Ferain I, Lai LS, Lenoble D, Mercha A, Nackaerts A, Pawlak BJ, Rooyackers R, Schulz T, San KT, Son NJ, Van Dal MJH, Verheyen P, von Arnim K, Witters L, Meyer KD, Biesemans S, Jurczak M
Solid-State Electronics, 52(9), 1291, 2008
6 Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth
Collaert N, Rooyackers R, Hikavyy A, Dixit A, Leys F, Verheyen P, Loo R, Jurczak M, Biesemans S
Thin Solid Films, 517(1), 101, 2008
7 pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues
Hikavyy A, Bhouri N, Loo R, Verheyen P, Clemente F, Hopkins J, Trussell R, Caymax M
Thin Solid Films, 517(1), 113, 2008
8 Leakage current control in recessed SiGe Source/Drain junctions
Claeys C, Gonzalez MB, Eneman G, Verheyen P, Bender H, Schreutelkamp R, Washington L, Nouri F, Simoen E
Journal of the Electrochemical Society, 154(9), H814, 2007
9 Quantifying self-heating effects with scaling in globally strained Si MOSFETs
Agaiby R, Yang Y, Olsen SH, O'Neill AG, Eneman G, Verheyen P, Loo R, Claeys C
Solid-State Electronics, 51(11-12), 1473, 2007
10 Analysis of the leakage current origin in thin strain relaxed buffer substrates
Eneman G, Simoen E, Delhougne R, Verheyen P, Simons V, Loo R, Caymax M, Claeys C, Vandervorst W, De Meyer K
Journal of the Electrochemical Society, 153(5), G379, 2006