검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Large-area MoS2 deposition via MOVPE Marx M, Nordmann S, Knoch J, Franzen C, Stampfer C, Andrzejewski D, Kummell T, Bacher G, Heuken M, Kalisch H, Vescan A Journal of Crystal Growth, 464, 100, 2017 |
| 2 |
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults Lutsenko EV, Rzheutski MV, Pavlovskii VN, Yablonskii GP, Alanzi M, Hamidalddin A, Alyamani A, Mauder C, Kalisch H, Reuters B, Heuken M, Vescan A, Naresh-Kumar G, Trager-Cowan C Journal of Crystal Growth, 434, 62, 2016 |
| 3 |
Effect of antimony on growth mode and properties of thick InGaN layers Koch H, Pietzonka I, Galler B, Strassburg M, Kalisch H, Vescan A, Lugauer HJ Journal of Crystal Growth, 414, 42, 2015 |
| 4 |
The controlled growth of GaN microrods on Si(111) substrates by MOCVD Foltynski B, Garro N, Vallo M, Finken M, Giesen C, Kalisch H, Vescan A, Cantarero A, Heuken M Journal of Crystal Growth, 414, 200, 2015 |
| 5 |
Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates Reuters B, Strate J, Hahn H, Finken M, Wille A, Heuken M, Kalisch H, Vescan A Journal of Crystal Growth, 391, 33, 2014 |
| 6 |
In-situ decomposition and etching of AIN and GaN in the presence of HCI Fahle D, Kruecken T, Dauelsberg M, Kalisch H, Heuken M, Vescan A Journal of Crystal Growth, 393, 89, 2014 |
| 7 |
MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers Tuna O, Hahn H, Kalisch H, Giesen C, Vescan A, Rzheutski MV, Pavlovskii VN, Lutsenko EV, Yablonskii GP, Heuken M Journal of Crystal Growth, 370, 2, 2013 |
| 8 |
HCl-assisted growth of GaN and AlN Fahle D, Brien D, Dauelsberg M, Strauch G, Kalisch H, Heuken M, Vescan A Journal of Crystal Growth, 370, 30, 2013 |
| 9 |
Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers Tuna O, Linhart WM, Lutsenko EV, Rzheutski MV, Yablonskii GP, Veal TD, McConville CF, Giesen C, Kalisch H, Vescan A, Heuken M Journal of Crystal Growth, 358, 51, 2012 |
| 10 |
Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics Hahn H, Achenbach J, Ketteniss N, Noculak A, Kalisch H, Vescan A Solid-State Electronics, 67(1), 90, 2012 |