| 1 |
Facet-free selective silicon epitaxy by reduced-pressure chemical vapor deposition - Process evaluation and impact on shallow trench isolation
Violette KE, Chao CP, Wise R, Unnikrishnan S
Journal of the Electrochemical Society, 146(5), 1895, 1999 |
| 2 |
Moderately in situ phosphorus-doped polycrystalline silicon by single wafer reduced pressure chemical vapor deposition
Violette KE, Wise RL
Journal of Vacuum Science & Technology B, 16(3), 1082, 1998 |
| 3 |
Optimization of Process Conditions for Selective Silicon Epitaxy Using Disilane, Hydrogen, and Chlorine
Oneil PA, Ozturk MC, Violette KE, Batchelor D, Christensen K, Maher DM
Journal of the Electrochemical Society, 144(9), 3309, 1997 |
| 4 |
Silicon Nucleation and Film Evolution on Silicon Dioxide Using Disilane - Rapid Thermal Chemical-Vapor-Deposition of Very Smooth Silicon at High Deposition Rates
Violette KE, Ozturk MC, Christensen KN, Maher DM
Journal of the Electrochemical Society, 143(2), 649, 1996 |
| 5 |
On the Role of Chlorine in Selective Silicon Epitaxy by Chemical-Vapor-Deposition
Violette KE, Oneil PA, Ozturk MC, Christensen K, Maher DM
Journal of the Electrochemical Society, 143(10), 3290, 1996 |
| 6 |
Boron Incorporation in Epitaxial Silicon Using Si2H6 and B2H6 in an Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition Reactor
Sanganeria MK, Violette KE, Ozturk MC, Harris G, Maher DM
Journal of the Electrochemical Society, 142(1), 285, 1995 |
| 7 |
Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition of Epitaxial Silicon Onto (100)Silicon .1. The Influence of Prebake on (Epitaxy Substrate) Interfacial Oxygen and Carbon Levels
Sanganeria MK, Ozturk MC, Harris G, Violette KE, Ban I, Lee CA, Maher DM
Journal of the Electrochemical Society, 142(11), 3961, 1995 |
| 8 |
Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition of Epitaxial Silicon on (100)Silicon .2. Carbon Incorporation into Layers and at Interfaces of Multilayer Structures
Sanganeria MK, Ozturk MC, Harris G, Violette KE, Lee CA, Maher DM
Journal of the Electrochemical Society, 142(11), 3970, 1995 |
| 9 |
Growth-Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition Reactor
Violette KE, Sanganeria MK, Ozturk MC, Harris G, Maher DM
Journal of the Electrochemical Society, 141(11), 3269, 1994 |
