검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 mu m light emission grown on InP substrate Grasse C, Gruendl T, Sprengel S, Wiecha P, Vizbaras K, Meyer R, Amann MC Journal of Crystal Growth, 370, 240, 2013 |
| 2 |
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5-2.7 mu m Vizbaras K, Bachmann A, Arafin S, Sailer K, Sprengel S, Boehm G, Meyer R, Amann MC Journal of Crystal Growth, 323(1), 446, 2011 |