화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 The layers of carbon nanomaterials as the base of ohmic contacts to p-GaN
Liday J, Vogrincic P, Vretenar V, Kotlar M, Marton M, Vavra I, Hotovy I, Breza J, Rehacek V
Applied Surface Science, 312, 63, 2014
2 Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate
Chromik S, Gierlowski P, Spankova M, Dobrocka E, Vavra I, Strbik V, Lalinsky T, Sojkova M, Liday J, Vogrincic P, Espinos JP
Applied Surface Science, 256(18), 5618, 2010
3 InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases
Cico K, Kuzmik J, Liday J, Husekova K, Pozzovivo G, Carlin JF, Grandjean N, Pogany D, Vogrincic P, Frohlich K
Journal of Vacuum Science & Technology B, 27(1), 218, 2009
4 Preparation and structural properties of MgO films grown on GaAs substrate
Chromik S, Spankova M, Vavra I, Liday J, Vogrincic P, Lobotka P
Applied Surface Science, 254(12), 3635, 2008
5 Auger electron spectroscopy of Au/NiOx contacts on p-GaN annealed in N-2 and O-2+N-2 ambients
Liday J, Hotovy I, Sitter H, Schmidegg K, Vogrincic P, Bonnani A, Breza J, Ecke G, Vavra I
Applied Surface Science, 253(6), 3174, 2007