화학공학소재연구정보센터
검색결과 : 52건
No. Article
1 Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates
France RM, Feifel M, Belz J, Beyer A, Volz K, Ohlmann J, Lackner D, Dimroth F
Journal of Crystal Growth, 506, 61, 2019
2 Influence of UDMHy on GaAs (001) surface reconstruction before and during growth of Ga(NAs) by MOVPE
Massmeyer O, Sterzer E, Nattermann L, Stolz W, Volz K
Applied Surface Science, 458, 512, 2018
3 Codeposited pentacene:perfluoropentacene grown on SiO2: A microstructural study by transmission electron microscopy
Felix R, Volz K, Gries KI
Journal of Crystal Growth, 458, 87, 2017
4 MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%
Nattermann L, Beyer A, Ludewig P, Hepp T, Sterzer E, Volz K
Journal of Crystal Growth, 463, 151, 2017
5 GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient
Doscher H, Hens P, Beyer A, Tapfer L, Volz K, Stolz W
Journal of Crystal Growth, 464, 2, 2017
6 MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications
Fuchs C, Beyer A, Volz K, Stolz W
Journal of Crystal Growth, 464, 201, 2017
7 Microstructural study of codeposited pentacene:perfluoropentacene grown on KCl by TEM techniques
Felix R, Breuer T, Witte G, Volz K, Gries KI
Journal of Crystal Growth, 471, 29, 2017
8 Exploiting strain to enhance the Si incorporation in GaAs-based III/V semiconductors using MOVPE
Nattermann L, Ludewig P, Sterzer E, Volz K
Journal of Crystal Growth, 470, 15, 2017
9 (GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
Sterzer E, Ringler B, Nattermann L, Beyer A, von Hanisch C, Stolz W, Volz K
Journal of Crystal Growth, 467, 132, 2017
10 Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM
Knaub N, Beyer A, Wegele T, Ludewig P, Volz K
Journal of Crystal Growth, 433, 89, 2016