화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70-85% Ge
Loo R, Souriau L, Ong P, Kenis K, Rip J, Storck P, Buschhardt T, Vorderwestner M
Journal of Crystal Growth, 324(1), 15, 2011
2 Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures
Storck P, Vorderwestner M, Kondratyev A, Talalaev R, Amamchyan A, Woelk E
Thin Solid Films, 518, S23, 2010