검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates Sundaram S, Li X, Alam S, Ayari T, Halfaya Y, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A Journal of Crystal Growth, 507, 352, 2019 |
| 2 |
Nanopyramid-based absorber to boost the efficiency of InGaN solar cells El Huni W, Karrakchou S, Halfaya Y, Arif M, Jordan MB, Puybaret R, Ayari T, Ennakrachi H, Bishop C, Gautier S, Ahaitouf A, Voss PL, Salvestrini JP, Ougazzaden A Solar Energy, 190, 93, 2019 |
| 3 |
Optimization of semibulk InGaN-based solar cell using realistic modeling El-Huni W, Migan-Dubois A, Djebbour Z, Voss PL, Salvestrini JP, Ougazzaden A Solar Energy, 157, 687, 2017 |
| 4 |
Improving InGaN heterojunction solar cells efficiency using a semibulk absorber Arif M, Elhuni W, Streque J, Sundaram S, Belahsene S, El Gmili Y, Jordan M, Li X, Patriarche G, Slaoui A, Migan A, Abderrahim R, Djebbour Z, Voss PL, Salvestrini JP, Ougazzaden A Solar Energy Materials and Solar Cells, 159, 405, 2017 |
| 5 |
Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO Pantzas K, Rogers DJ, Bove P, Sandana VE, Teherani FH, El Gmili Y, Molinari M, Patriarche G, Largeau L, Mauguin O, Suresh S, Voss PL, Razeghi M, Ougazzaden A Journal of Crystal Growth, 435, 105, 2016 |
| 6 |
MOVPE grown periodic AlN/BAIN heterostructure with high boron content Li X, Sundaram S, El Gmili Y, Genty F, Bouchoule S, Patriache G, Disseix P, Reveret F, Leymarie J, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A Journal of Crystal Growth, 414, 119, 2015 |
| 7 |
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Reveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, Ougazzaden A Journal of Crystal Growth, 432, 37, 2015 |
| 8 |
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE Pantzas K, El Gmili Y, Dickerson J, Gautier S, Largeau L, Mauguin O, Patriarche G, Suresh S, Moudakir T, Bishop C, Ahaitouf A, Rivera T, Tanguy C, Voss PL, Ougazzaden A Journal of Crystal Growth, 370, 57, 2013 |
| 9 |
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire Gautier S, Moudakir T, Patriarche G, Rogers DJ, Sandana VE, Teherani FH, Bove P, El Gmili Y, Pantzas K, Sundaram S, Troadec D, Voss PL, Razeghi M, Ougazzaden A Journal of Crystal Growth, 370, 63, 2013 |
| 10 |
Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content Gautier S, Orsal G, Moudakir T, Maloufi N, Jomard F, Alnot M, Djebbour Z, Sirenko AA, Abid M, Pantzas K, Ferguson IT, Voss PL, Ougazzaden A Journal of Crystal Growth, 312(5), 641, 2010 |