검색결과 : 14건
No. | Article |
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1 |
Fully gravure printed organic photovoltaic modules: A straightforward process with a high potential for large scale production Kapnopoulos C, Mekeridis ED, Tzounis L, Polyzoidis C, Zachariadis A, Tsimikli S, Gravalidis C, Laskarakis A, Vouroutzis N, Logothetidis S Solar Energy Materials and Solar Cells, 144, 724, 2016 |
2 |
Preparation bv melt mixing and characterization of isotactic polypropylene/SiO2 nanocomposites containing untreated and surface-treated nanoparticles Bikiaris DN, Papageorgiou GZ, Pavlidou E, Vouroutzis N, Palatzoglou P, Karayannidis GP Journal of Applied Polymer Science, 100(4), 2684, 2006 |
3 |
Crystallization of amorphous-Si films by flash lamp annealing Pecz B, Dobos L, Panknin D, Skorupa W, Lioutas C, Vouroutzis N Applied Surface Science, 242(1-2), 185, 2005 |
4 |
Deposition of hydroxyapatite thin films by Nd : YAG laser ablation: a microstructural study Nistor LC, Ghica C, Teodorescu VS, Nistor SV, Dinescu M, Matei D, Frangis N, Vouroutzis N, Liutas C Materials Research Bulletin, 39(13), 2089, 2004 |
5 |
Behavior of micropipes during growth in 4H-SiC Vouroutzis N, Yakimova R, Syvajarvi M, Jacobson H, Stoemenos J, Janzen E Materials Science Forum, 389-3, 395, 2002 |
6 |
Characteristics of planar defects in shallow trenches related to the presence of micropipes Vouroutzis N, Syvajarvi M, Stoemenos J, Yakimova R Materials Science Forum, 433-4, 277, 2002 |
7 |
Ion implantation effects on the microhardness and microstructure of GaN Kavouras P, Katsikini M, Vouroutzis N, Lioutas CB, Paloura EC, Antonopoulos J, Karakostas T Journal of Crystal Growth, 230(3-4), 454, 2001 |
8 |
Oxidation dependence on defect density in 3C-SiC films Eickhoff M, Vouroutzis N, Nielsen A, Krotz G, Stoemenos J Journal of the Electrochemical Society, 148(6), G336, 2001 |
9 |
Improvement of the 3C-SiC/Si interface by flash lamp annealing Panknin D, Stoemenos J, Eickhoff M, Heera V, Vouroutzis N, Krotz G, Skorupa W Materials Science Forum, 353-356, 151, 2001 |
10 |
Selective deposition of 3C-SiC epitaxially grown on SOI subtrates Eickhoff M, Zappe S, Nielsen A, Krotz G, Obermeier E, Vouroutzis N, Stoemenos J Materials Science Forum, 353-356, 175, 2001 |