화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella T, Witters L, Mercha A, Kerner C, Rakowski M, Ortolland C, Ragnarsson LA, Parvais B, De Keersgieter A, Kubicek S, Redolfi A, Vrancken C, Brus S, Lauwers A, Absil P, Biesemans S, Hoffmann T
Solid-State Electronics, 54(9), 855, 2010
2 Achieving low-V-T Ni-FUSICMOS via lanthanide incorporation in the gate stack
Veloso A, Yu HY, Lauwers A, Chang SZ, Adelmann C, Onsia B, Demand M, Brus S, Vrancken C, Singanamalla R, Lehnen P, Kittl J, Kauerauf T, Vos R, O'Sullivan BJ, Van Elshocht S, Mitsuhashi R, Whittemore G, Yin KM, Niwa M, Hoffmann T, Absil P, Jurczak M, Biesemans S
Solid-State Electronics, 52(9), 1303, 2008