검색결과 : 39건
| No. | Article |
|---|---|
| 1 |
Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy Piedra-Lorenzana JA, Yamane K, Shiota K, Fujimoto J, Tanaka S, Sekiguchi H, Okada H, Wakahara A Journal of Crystal Growth, 512, 37, 2019 |
| 2 |
Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique Sekiguchi H, Date K, Imanishi T, Tateishi H, Yamane K, Okada H, Kishino K, Wakahara A Journal of Crystal Growth, 511, 73, 2019 |
| 3 |
Impact of temperature and nitrogen composition on the growth of GaAsPN alloys Yamane K, Mugikura S, Tanaka S, Goto M, Sekiguchi H, Okada H, Wakahara A Journal of Crystal Growth, 486, 24, 2018 |
| 4 |
Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells Yamane K, Sato K, Sekiguchi H, Okada H, Wakahara A Journal of Crystal Growth, 473, 55, 2017 |
| 5 |
Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation Urakami N, Yamane K, Sekiguchi H, Okada H, Wakahara A Journal of Crystal Growth, 435, 19, 2016 |
| 6 |
Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates Yamano K, Kishino K, Sekiguchi H, Oto T, Wakahara A, Kawakami Y Journal of Crystal Growth, 425, 316, 2015 |
| 7 |
Growth of dilute BGaP alloys by molecular beam epitaxy Urakami N, Fukami F, Sekiguchi H, Okada H, Wakahara A Journal of Crystal Growth, 378, 96, 2013 |
| 8 |
Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE Umeno K, Furukawa Y, Urakami N, Mitsuyoshi S, Yonezu H, Wakahara A Journal of Crystal Growth, 312(2), 231, 2010 |
| 9 |
Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing Yamane K, Kawai T, Furukawa Y, Okada H, Wakahara A Journal of Crystal Growth, 312(15), 2179, 2010 |
| 10 |
Epitaxial growth of Sc-doped ZnO films on Si by sol-gel route Sharma R, Sehrawat K, Wakahara A, Mehra RM Applied Surface Science, 255(11), 5781, 2009 |