화학공학소재연구정보센터
검색결과 : 46건
No. Article
1 Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing
Wang XL, Qin XY, Wang W, Liu Y, Shi XR, Sun Y, Liu C, Zhao JL, Zhang GH, Liu H, Cho KJ, Wu R, Wang J, Zhang S, Wallace RM, Dong H
Applied Surface Science, 443, 567, 2018
2 MBE growth of few-layer 2H-MoTe2 on 3D substrates
Vishwanath S, Sundar A, Liu XY, Azcatl A, Lochocki E, Woll AR, Rouvimov S, Hwang WS, Lu N, Peng X, Lien HH, Weisenberger J, McDonnell S, Kim MJ, Dobrowolska M, Furdyna JK, Shen K, Wallace RM, Jena D, Xing HG
Journal of Crystal Growth, 482, 61, 2018
3 Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 degrees C) by Al2O3 incorporation
Park TJ, Byun Y, Wallace RM, Kim J
Applied Surface Science, 371, 360, 2016
4 Two-dimensional gallium nitride realized via graphene encapsulation
Al Balushi ZY, Wang K, Ghosh RK, Vila RA, Eichfeld SM, Caldwell JD, Qin XY, Lin YC, DeSario PA, Stone G, Subramanian S, Paul DF, Wallace RM, Datta S, Redwing JM, Robinson JA
Nature Materials, 15(11), 1166, 2016
5 Atomically-thin layered films for device applications based upon 2D TMDC materials
McDonnell SJ, Wallace RM
Thin Solid Films, 616, 482, 2016
6 Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors
Makela J, Tuominen M, Kuzmin M, Yasir M, Lang J, Punkkinen MPJ, Laukkanen P, Kokko K, Schulte K, Osiecki J, Wallace RM
Applied Surface Science, 329, 371, 2015
7 Near-unity photoluminescence quantum yield in MoS2
Amani M, Lien DH, Kiriya D, Xiao J, Azcatl A, Noh J, Madhvapathy SR, Addou R, Santosh KC, Dubey M, Cho K, Wallace RM, Lee SC, He JH, Ager JW, Zhang X, Yablonovitch E, Javey A
Science, 350(6264), 1065, 2015
8 Effects of growth temperature and oxidant feeding time on residual C-and N-related impurities and Si diffusion behavior in atomic-layer-deposited La2O3 thin films
Park TJ, Sivasubramani P, Wallace RM, Kim J
Applied Surface Science, 292, 880, 2014
9 Scaling of HfO2 dielectric on CVD graphene
McDonnell S, Azcatl A, Mordi G, Floresca C, Pirkle A, Colombo L, Kim J, Kim M, Wallace RM
Applied Surface Science, 294, 95, 2014
10 Encapsulation of high frequency organic Schottky diodes
Ai YM, Gowrisanker S, Jia HP, Quevedo-Lopez M, Alshareef HN, Wallace RM, Gnade BE
Thin Solid Films, 531, 509, 2013