화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 Control of GaAs nanowire morphology by group III precursor chemistry
Salehzadeh O, Watkins SP
Journal of Crystal Growth, 325(1), 5, 2011
2 Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications
Lackner D, Pitts OJ, Najmi S, Sandhu P, Kavanagh KL, Yang A, Steger M, Thewalt MLW, Wang Y, McComb DW, Bolognesi CR, Watkins SP
Journal of Crystal Growth, 311(14), 3563, 2009
3 Atomic ordering in GaAsSb (001) grown by metalorganic vapor phase epitaxy
Jiang WY, Kavanagh KL, Watkins SP
Journal of Crystal Growth, 311(19), 4391, 2009
4 Flow modulation epitaxy of ZnO films on sapphire substrates
Huang H, Jiang WY, Watkins SP
Journal of Crystal Growth, 310(18), 4050, 2008
5 Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications
Pitts OJ, Lackner D, Cherng YT, Watkins SP
Journal of Crystal Growth, 310(23), 4858, 2008
6 Optical and electrical characterization of OMVPE-grown AlGaAsSb epitaxial layers on InP substrates
Rao TS, So MG, Jiang WY, Mayer T, Roorda S, Gujrathi SC, Thewalt MLW, Bolognesi CR, Watkins SP
Journal of Crystal Growth, 287(2), 532, 2006
7 Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSb
Jiang WY, Liu JQ, Zhang X, Thewalt MLW, Kavanagh KL, Watkins SP
Journal of Crystal Growth, 287(2), 541, 2006
8 Numerical optimization of an optical showerhead reactor design for organometallic vapor phase epitaxy
Guo Y, Pitts OJ, Jiang WY, Watkins SP
Journal of Crystal Growth, 297(2), 345, 2006
9 Surface modifications induced by bismuth on (001)GaAs surfaces
Jiang WY, Liu JQ, So MG, Myrtle K, Kavanagh KL, Watkins SP
Journal of Crystal Growth, 277(1-4), 85, 2005
10 Ultrathin type-II GaSb/GaAs quantum wells grown by OMVPE
Pitts OJ, Watkins SP, Wang CX, Stotz JAH, Meyer TA, Thewalt MLW
Journal of Crystal Growth, 269(2-4), 187, 2004