검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM Knaub N, Beyer A, Wegele T, Ludewig P, Volz K Journal of Crystal Growth, 433, 89, 2016 |
| 2 |
MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates Ludewig P, Reinhard S, Jandieri K, Wegele T, Beyer A, Tapfer L, Volz K, Stolz W Journal of Crystal Growth, 438, 63, 2016 |
| 3 |
Annealing effects on the composition and disorder of Ga(N,As,P) quantum wells on silicon substrates for laser application Gies S, Zimprich M, Wegele T, Kruska C, Beyer A, Stolz W, Volz K, Heimbrodt W Journal of Crystal Growth, 402, 169, 2014 |
| 4 |
Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE Sommer N, Buss R, Ohlmann J, Wegele T, Jurecka C, Liebich S, Kunert B, Stolz W, Volz K Journal of Crystal Growth, 370, 191, 2013 |