화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Comparison of Cl-2 and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source
Tian WC, Weigold JW, Pang SW
Journal of Vacuum Science & Technology B, 18(4), 1890, 2000
2 Characterization of bending in single crystal Si beams and resonators
Weigold JW, Juan WH, Pang SW, Borenstein JT
Journal of Vacuum Science & Technology B, 17(4), 1336, 1999
3 Dry etching of deep Si trenches for released resonators in a Cl-2 plasma
Weigold JW, Juan WH, Pang SW
Journal of the Electrochemical Society, 145(5), 1767, 1998
4 Dry etching of Si field emitters and high aspect ratio resonators using an inductively coupled plasma source
Rakhshandehroo MR, Weigold JW, Tian WC, Pang SW
Journal of Vacuum Science & Technology B, 16(5), 2849, 1998
5 Etching and Boron-Diffusion of High-Aspect-Ratio Si Trenches for Released Resonators
Weigold JW, Juan WH, Pang SW
Journal of Vacuum Science & Technology B, 15(2), 267, 1997