화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Sidewall damage in plasma etching of Si/SiGe heterostructures
Ding R, Klein LJ, Friesen MG, Eriksson MA, Wendt AE
Journal of Vacuum Science & Technology A, 27(4), 836, 2009
2 Plasma etch removal of poly(methyl methacrylate) in block copolymer lithography
Ting YH, Park SM, Liu CC, Liu XS, Himpsel FJ, Nealey PF, Wendt AE
Journal of Vacuum Science & Technology B, 26(5), 1684, 2008
3 Anisotropic fluorocarbon plasma etching of Si/SiGe heterostructures
Ding R, Klein LJ, Eriksson MA, Wendt AE
Journal of Vacuum Science & Technology B, 25(2), 404, 2007
4 Ion energy control at substrates during plasma etching of patterned structures
Silapunt R, Wendt AE, Kirmse KHR
Journal of Vacuum Science & Technology B, 25(6), 1882, 2007
5 Pattern transfer using poly(styrene-block-methyl methacrylate) copolymer films and reactive ion etching
Liu CC, Nealey PF, Ting YH, Wendt AE
Journal of Vacuum Science & Technology B, 25(6), 1963, 2007
6 Ion bombardment energy control for selective fluorocarbon plasma etching of organosilicate glass
Silapunt R, Wendt AE, Kirmse K, Losey LP
Journal of Vacuum Science & Technology B, 22(2), 826, 2004
7 Fabrication of polymeric substrates with well-defined nanometer-scale topography and tailored surface chemistry
Kim SR, Teixeira AI, Nealey PF, Wendt AE, Abbott NL
Advanced Materials, 14(20), 1468, 2002
8 Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity
Wang SB, Wendt AE
Journal of Vacuum Science & Technology A, 19(5), 2425, 2001
9 Interactions between plasmas in ionized physical vapor deposition discharges
Andrew Y, Lu Z, Snodgrass T, Teitzel G, Wendt AE
Journal of Vacuum Science & Technology A, 18(5), 2137, 2000
10 Determination of metal vapor ion concentration in an argon/copper plasma for ionized physical vapor deposition (vol A16, pg 2198, 1998)
Foster JE, Wendt AE, Wang WW, Booske JH
Journal of Vacuum Science & Technology A, 17(1), 322, 1999