화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Opposing Temperature Dependence of the Stretching Response of Single PEG and PNiPAM Polymers
Kolberg A, Wenzel C, Hackenstrass K, Schwarzl R, Ruttiger C, Hugel T, Gallei M, Netz RR, Balzer BN
Journal of the American Chemical Society, 141(29), 11603, 2019
2 Physical Characterization of PECVD and PEALD Ru(-C) Films and Comparison with PVD Ruthenium Film Properties
Wojcik H, Junige M, Bartha W, Albert M, Neumann V, Merkel U, Peeva A, Gluch J, Menzel S, Munnik F, Liske R, Utess D, Richter I, Klein C, Engelmann HJ, Ho P, Hossbach C, Wenzel C
Journal of the Electrochemical Society, 159(2), H166, 2012
3 Effect of nitrogen content on the degradation mechanisms of thin Ta-Si-N diffusion barriers for Cu metallization
Hubner R, Hecker M, Mattern N, Hoffmann V, Wetzig K, Heuer H, Wenzel C, Engelmann HJ, Gehre D, Zschech E
Thin Solid Films, 500(1-2), 259, 2006
4 Thin tantalum-silicon-oxygen/tantalum-silicon-nitrogen films as high efficiency humidity diffusion barriers for solar cell encapsulation
Heuer H, Wenzel C, Herrmann D, Hubner R, Zhang ZL, Bartha JW
Thin Solid Films, 515(4), 1612, 2006
5 The effect of silicon ion implantation on the structure of tantalum-silicon contacts
Peikert M, Bhandari R, Wieser E, Wenzel C, Lipp D, Reuther H, Mucklich A
Thin Solid Films, 449(1-2), 187, 2004
6 Degradation mechanisms of Ta and Ta-Si diffusion barriers during thermal stressing
Hubner R, Hecker M, Mattern N, Hoffmann V, Wetzig K, Wenger C, Engelmann HJ, Wenzel C, Zschech E
Thin Solid Films, 458(1-2), 237, 2004
7 Influence of nitrogen content on the crystallization behavior of thin Ta-Si-N diffusion barriers
Hubner R, Hecker M, Mattern N, Voss A, Acker J, Hoffmann V, Wetzig K, Engelmann HJ, Zschech E, Heuer H, Wenzel C
Thin Solid Films, 468(1-2), 183, 2004
8 Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2
Hubner R, Hecker M, Mattern N, Hoffmann V, Wetzig K, Wenger C, Engelmann HJ, Wenzel C, Zschech E, Bartha JW
Thin Solid Films, 437(1-2), 248, 2003
9 Improvement of Ta-based thin film barriers on copper by ion implantation of nitrogen and oxygen
Wieser E, Peikert M, Wenzel C, Schreiber J, Bartha JW, Bendjus B, Melov VV, Reuther H, Mucklich A, Adolphi B, Fischer D
Thin Solid Films, 410(1-2), 121, 2002
10 Influence of N content on microstructure and thermal stability of Ta-N thin films for Cu interconnection
Hecker M, Fischer D, Hoffmann V, Engelmann HJ, Voss A, Mattern N, Wenzel C, Vogt C, Zschech E
Thin Solid Films, 414(2), 184, 2002