검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Superconducting platinum suicide for electron cooling in silicon Prest MJ, Richardson-Bullock JS, Zhao QT, Muhonen JT, Gunnarsson D, Prunnila M, Shah VA, Whall TE, Parker EHC, Leadley DR Solid-State Electronics, 103, 15, 2015 |
| 2 |
Comparison of electron-phonon and hole-phonon energy loss rates in silicon Richardson-Bullock JS, Prest MJ, Shah VA, Gunnarsson D, Prunnila M, Dobbie A, Myronov M, Morris RJH, Whall TE, Parker EHC, Leadley DR Solid-State Electronics, 103, 40, 2015 |
| 3 |
Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry Shah VA, Myronov M, Rhead SD, Halpin JE, Shchepetov A, Prest MJ, Prunnila M, Whall TE, Parker EHC, Leadley DR Solid-State Electronics, 98, 93, 2014 |
| 4 |
Improved effective mobility extraction in MOSFETs Thomas SM, Whall TE, Parker EHC, Leadley DR, Lander RJP, Vellianitis G, Watling JR Solid-State Electronics, 53(12), 1252, 2009 |
| 5 |
Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs von Haartman M, Malm BG, Hellstrom PE, Ostling M, Grasby TJ, Whall TE, Parker EHC, Lyutovich K, Oehme M, Kasper E Solid-State Electronics, 51(5), 771, 2007 |
| 6 |
Low-frequency noise suppression and dc characteristics enhancement in sub-mu m metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE Myronov M, Durov S, Mironov OA, Parker EHC, Whall TE, Hackbarth T, Hock G, Herzog HJ, Konig U Applied Surface Science, 224(1-4), 265, 2004 |
| 7 |
SiGe(C) epitaxial technologies - issues and prospectives Grasby TJ, Whall TE, Parker EHC Thin Solid Films, 412(1-2), 44, 2002 |
| 8 |
SiGe - heterostructures for CMOS technology Whall TE, Parker EHC Thin Solid Films, 367(1-2), 250, 2000 |
| 9 |
Si/SiGe/Si pMOS performance - alloy scattering and other considerations Whall TE, Parker EHC Thin Solid Films, 369(1-2), 297, 2000 |
| 10 |
Fully Pseudomorphic Si/SiGe/Si Heterostructures for P-Channel Field-Effect Devices Whall TE Thin Solid Films, 294(1-2), 160, 1997 |