검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Energy-harvesting devices - Beyond the battery White BE Nature Nanotechnology, 3(2), 71, 2008 |
| 2 |
Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2-TiO2 gate dielectrics Triyoso DH, Hegde RI, Wang XD, Stoker MW, Rai R, Ramon ME, White BE, Tobin PJ Journal of the Electrochemical Society, 153(9), G834, 2006 |
| 3 |
Precise positioning of single-walled carbon nanotubes by ac dielectrophoresis Banerjee S, White BE, Huang LM, Rego BJ, O'Brien S, Herman IP Journal of Vacuum Science & Technology B, 24(6), 3173, 2006 |
| 4 |
Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD Triyoso DH, Ramon M, Hegde RI, Roan D, Garcia R, Baker J, Wang XD, Fejes P, White BE, Tobin PJ Journal of the Electrochemical Society, 152(3), G203, 2005 |
| 5 |
Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition Triyoso DH, Hegde RI, Grant JM, Schaeffer JK, Roan D, White BE, Tobin PJ Journal of Vacuum Science & Technology B, 23(1), 288, 2005 |
| 6 |
Lanthanum aluminate by atomic layer deposition and molecular beam epitaxy Triyoso DH, Li H, Hegde RI, Yu Z, Moore K, Grant J, White BE, Tobin PJ Journal of Vacuum Science & Technology B, 23(6), 2480, 2005 |
| 7 |
Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays Rao RA, Gasquet HP, Steimle RF, Rinkenberger G, Straub S, Muralidhar R, Anderson SGH, Yater JA, Ledezma JC, Hamilton J, Acred B, Swift CT, Hradsky B, Peschke J, Sadd M, Prinz EJ, Chang KM, White BE Solid-State Electronics, 49(11), 1722, 2005 |
| 8 |
A model for the channel potential of charge-trapping memories and its implications for device scaling Sadd M, Anderson SGH, Hradsky B, Muralidhar R, Prinz EJ, Rao R, Straub S, Steimle RF, Swift CT, White BE, Yater JA Solid-State Electronics, 49(11), 1754, 2005 |
| 9 |
Reversible surface oxidation and efficient luminescence quenching in semiconductor single-wall carbon nanotubes Dukovic G, White BE, Zhou ZY, Wang F, Jockusch S, Steigerwald ML, Heinz TF, Friesner RA, Turro NJ, Brus LE Journal of the American Chemical Society, 126(46), 15269, 2004 |
| 10 |
Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2 Triyoso D, Liu R, Roan D, Ramon M, Edwards NV, Gregory R, Werho D, Kulik J, Tam G, Irwin E, Wang XD, La LB, Hobbs C, Garcia R, Baker J, White BE, Tobin P Journal of the Electrochemical Society, 151(10), F220, 2004 |