| 1 |
Femtosecond laser ablation of wide band-gap materials
Takayama H, Maruyama T
Applied Surface Science, 261, 705, 2012 |
| 2 |
Importance of H-2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H-2
Hoshide Y, Komura Y, Tabata A, Kitagawa A, Kondo A
Thin Solid Films, 517(12), 3520, 2009 |
| 3 |
Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N-2 as doping gas
Hoshide Y, Tabata A, Kitagawa A, Kondo A
Thin Solid Films, 517(12), 3524, 2009 |
| 4 |
Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H-2 system
Komura Y, Tabata A, Narita T, Kondo A
Thin Solid Films, 516(5), 633, 2008 |
| 5 |
Optical and electrical properties of epitaxial (Mg,Cd)(x)Zn1-xO, ZnO, and ZnO :(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition
Lorenz M, Kaidashev EM, von Wenckstern H, Riede V, Bundesmann C, Spemann D, Benndorf G, Hochmuth H, Rahm A, Semmelhack HC, Grundmann M
Solid-State Electronics, 47(12), 2205, 2003 |
