검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers Koleske DD, Fischer AJ, Bryant BN, Kotula PG, Wierer JJ Journal of Crystal Growth, 415, 57, 2015 |
| 2 |
Controlling indium incorporation in InGaN barriers with dilute hydrogen flows Koleske DD, Wierer JJ, Fischer AJ, Lee SR Journal of Crystal Growth, 390, 38, 2014 |
| 3 |
Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells Lee SR, Koleske DD, Crawford MH, Wierer JJ Journal of Crystal Growth, 355(1), 63, 2012 |