검색결과 : 9건
No. | Article |
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1 |
Pulsed laser deposition of HfO2 and PrxOy high-k films on Si(100) Ratzke M, Wolfframm D, Kappa M, Kouteva-Arguirova S, Reif J Applied Surface Science, 247(1-4), 128, 2005 |
2 |
Femtosecond laser ionization mass spectrometric analysis of layers grown by pulsed laser deposition Costache F, Ratzke M, Wolfframm D, Reif H Applied Surface Science, 247(1-4), 249, 2005 |
3 |
Laser-induced ion emission from dielectrics Henyk M, Mitzner R, Wolfframm D, Reif J Applied Surface Science, 154, 249, 2000 |
4 |
Femtosecond index grating in barium flouride: efficient self-diffraction and enhancement of surface SHG Schneider T, Wolfframm D, Mitzner R, Reif J Applied Surface Science, 154, 565, 2000 |
5 |
Ultra short laser pulse induced charged particle emission from wide bandgap crystals Henyk M, Wolfframm D, Reif J Applied Surface Science, 168(1-4), 263, 2000 |
6 |
A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(001) interface studies Wolfframm D, Evans DA, Westwood DI, Riley J Journal of Crystal Growth, 216(1-4), 119, 2000 |
7 |
Nonlinear optical characterization of the surface of silicon wafers: In-situ detection of external stress Reif J, Schmid R, Schneider T, Wolfframm D Solid-State Electronics, 44(5), 809, 2000 |
8 |
Interpretation of reflectance anisotropy spectroscopy spectra of ZnSe(001) grown on GaAs(001) in terms of bulk, interface, and surface contributions Frisch AM, Schultz C, Herrmann T, Emiliani V, Wolfframm D, Evans DA, Korn M, Rossow U, Esser N, Richter W Journal of Vacuum Science & Technology B, 16(4), 2350, 1998 |
9 |
Zinc-Sulfide on Gap(110) - Characterization of Epitaxial-Growth and Electronic-Structure Wolfframm D, Bailey P, Evans DA, Neuhold G, Horn K Journal of Vacuum Science & Technology A, 14(3), 844, 1996 |