검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN Mogilatenko A, Knauer A, Zeimer U, Netzel C, Jeschke J, Unger RS, Hartmann C, Wollweber J, Dittmar A, Juda U, Weyers M, Bickermann M Journal of Crystal Growth, 505, 69, 2019 |
| 2 |
Physical vapor transport growth of bulk Al1-xScxN single crystals Dittmar A, Wollweber J, Schmidbauer M, Klimm D, Hartmann C, Bickermann M Journal of Crystal Growth, 500, 74, 2018 |
| 3 |
SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen Hartmann C, Albrecht M, Wollweber J, Schuppang J, Juda U, Guguschev C, Golka S, Dittmar A, Fornari R Journal of Crystal Growth, 344(1), 19, 2012 |
| 4 |
Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species Guguschev C, Dittmar A, Moukhina E, Hartmann C, Golka S, Wollweber J, Bickermann M, Fornari R Journal of Crystal Growth, 360, 185, 2012 |
| 5 |
In situ kinetic investigations during aluminium nitride purification and crystal growth processes by capillary coupled mass spectrometry Guguschev C, Moukhina E, Wollweber J, Dittmar A, Bottcher K, Hartmann C, Golka S, Fornari R Thermochimica Acta, 526(1-2), 213, 2011 |
| 6 |
Homoepitaxial seeding and growth of bulk AlN by sublimation Hartmann C, Wollweber J, Seitz C, Albrecht M, Fornari R Journal of Crystal Growth, 310(5), 930, 2008 |
| 7 |
PVT-growth and characterization of single crystalline 3C-SiC on a (0001) 6H-SiC substrate Polychroniadis E, Mantzari A, Freudenberg A, Wollweber J, Nitschke R, Frank T, Pensl G, Schoner A Materials Science Forum, 483, 319, 2005 |
| 8 |
Stable parameter range for 3C-SiC sublimation growth on graphite Wollweber J, Mantzari A, Polychroniadis EK, Balloud C, Freudenberg A, Nitschke R, Camassel J Materials Science Forum, 457-460, 143, 2004 |
| 9 |
Evolution of domain walls in 6H-and 4H-SiC single crystals Siche D, Rost HJ, Doerschel J, Schulz D, Wollweber J Journal of Crystal Growth, 237, 1187, 2002 |
| 10 |
On mass transport and surface morphology of sublimation grown 4H silicon carbide Schulz D, Doerschel J, Lechner M, Rost HJ, Siche D, Wollweber J Journal of Crystal Growth, 246(1-2), 31, 2002 |