| 1 |
Improved Performance of GaN-Based LEDs by Covering Top C-Plane of Patterned Sapphire Substrate with Oxide Layer
Lin BW, Hsieh CY, Wang BM, Hsu WC, Wu YCS
Electrochemical and Solid State Letters, 14(8), J48, 2011 |
| 2 |
Electrical performance and thermal stability of MIC poly-Si TFTs improved using drive-in nickel induced crystallization
Lai MH, Wu YCS, Chang CP
Materials Chemistry and Physics, 126(1-2), 69, 2011 |
| 3 |
Effect of Ni thin film on the reflectivity of ITO/Ag mirrors of GaN light-emitting diodes
Wu YCS, Huang PW
Electrochemical and Solid State Letters, 11(11), J82, 2008 |
| 4 |
A simple method for gettering of nickel within the Ni-metal-induced lateral crystallization polycrystalline silicon film
Hou CY, Wu YCS
Electrochemical and Solid State Letters, 9(7), H65, 2006 |
| 5 |
The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs
Hsu CY, Lan WH, Wu YCS
Journal of the Electrochemical Society, 153(5), G475, 2006 |
| 6 |
Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures
Liu PC, Wu YCS
Electrochemical and Solid State Letters, 8(2), G31, 2005 |
| 7 |
Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers
Liu PC, Hou CY, Wu YCS
Thin Solid Films, 478(1-2), 280, 2005 |
| 8 |
Synthesis of microcrystalline silicon at room temperature using ICP
Wu JH, Shieh JM, Dai BT, Wu YCS
Electrochemical and Solid State Letters, 7(6), G128, 2004 |
| 9 |
Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni
Chao CW, Wu YCS, Hu GR, Feng MS
Journal of the Electrochemical Society, 150(9), C631, 2003 |
| 10 |
The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films
Lin PY, Wu YCS
Materials Chemistry and Physics, 80(2), 397, 2003 |
