검색결과 : 10건
No. | Article |
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1 |
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults Lutsenko EV, Rzheutski MV, Pavlovskii VN, Yablonskii GP, Alanzi M, Hamidalddin A, Alyamani A, Mauder C, Kalisch H, Reuters B, Heuken M, Vescan A, Naresh-Kumar G, Trager-Cowan C Journal of Crystal Growth, 434, 62, 2016 |
2 |
MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers Tuna O, Hahn H, Kalisch H, Giesen C, Vescan A, Rzheutski MV, Pavlovskii VN, Lutsenko EV, Yablonskii GP, Heuken M Journal of Crystal Growth, 370, 2, 2013 |
3 |
Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers Tuna O, Linhart WM, Lutsenko EV, Rzheutski MV, Yablonskii GP, Veal TD, McConville CF, Giesen C, Kalisch H, Vescan A, Heuken M Journal of Crystal Growth, 358, 51, 2012 |
4 |
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates Mauder C, Reuters B, Wang KR, Fahle D, Trampert A, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Chou MMC, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 315(1), 246, 2011 |
5 |
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates Mauder C, Reuters B, Khoshroo LR, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 312(11), 1823, 2010 |
6 |
AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique Jmerik VN, Shubina TV, Mizerov AM, Belyaev KG, Sakharov AV, Zamoryanskaya MV, Sitnikova AA, Davydov VY, Kop'ev PS, Lutsenko EV, Rzheutskii NV, Danilchik AV, Yablonskii GP, Ivanov SV Journal of Crystal Growth, 311(7), 2080, 2009 |
7 |
Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures Ivanov SV, Lutsenko EV, Sorokin SV, Sedova IV, Gronin SV, Voinilovich AG, Tarasuk NP, Yablonskii GP, Kop'ev PS Journal of Crystal Growth, 311(7), 2120, 2009 |
8 |
Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates Mauder C, Khoshroo LR, Behmenburg H, Wen TC, Dikme Y, Rzheutskii MV, Yablonskii GP, Woitok J, Chou MMC, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 310(23), 4976, 2008 |
9 |
Influence of thermal annealing on photoluminescence and structural properties of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1, 1'-biphenyl-4,4'-diamine (alpha-NPD) organic thin films Osipov KA, Pavlovskii VN, Lutsenko EV, Gurskii AL, Yablonskii GP, Hartmann S, Janssen A, Johannes HH, Caspary R, Kowalsky W, Meyer N, Gersdorff A, Heuken A, van Gemmern P, Zimmermann C, Jessen F, Kalisch H, Jansen RH Thin Solid Films, 515(11), 4834, 2007 |
10 |
Effect of above band-gap illumination on structure of free exciton reflection spectra of ZnSe Rakovich Y, Bryja L, Ciorga M, Misiewicz J, Heuken M, Heime K, Yablonskii GP Thin Solid Films, 364(1-2), 287, 2000 |