화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth
Polyakov AY, Smirnov NB, Govorkov AN, Markov AN, Yakimov EB, Vergeles PS, Amano H, Kawashima T
Journal of Crystal Growth, 311(10), 2923, 2009
2 Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yakimov EB, Vergeles PS, Lee IH, Lee CR, Pearton SJ
Journal of Vacuum Science & Technology B, 26(3), 990, 2008