화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Wet sulfur passivation of GaSb(100) surface for optoelectronic applications
Kunitsyna EV, L'vova TV, Dunaevskii MS, Terent'ev YV, Semenov AN, Solov'ev VA, Meltser BY, Ivanov SV, Yakovlev YP
Applied Surface Science, 256(18), 5644, 2010
2 Type II GaAsxSb1-x/InAs (x < 0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
Moiseev KD, Romanov VV, Voronina TI, Lagunova TS, Mikhailova MP, Yakovlev YP
Journal of Crystal Growth, 310(23), 4846, 2008
3 Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
Kizhayev SS, Zotova NV, Molchanov SS, Pushnyi BV, Yakovlev YP
Journal of Crystal Growth, 248, 296, 2003