검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si Ohachi T, Yamabe N, Yamamoto Y, Wada M, Ariyada O Journal of Crystal Growth, 318(1), 468, 2011 |
| 2 |
Interface roughness of double buffer layer of GaN film grown on Si(1 1 1) substrate using GIXR analysis Yamamoto Y, Yamabe N, Ohachi T Journal of Crystal Growth, 318(1), 474, 2011 |
| 3 |
Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates Ohachi T, Yamabe N, Shimomura H, Shimamura T, Ariyada O, Wada M Journal of Crystal Growth, 311(10), 2987, 2009 |
| 4 |
Nitridation of Si(111) for growth of 2H-AlN(0001)/beta-Si3N4/Si(111) structure Yamabe N, Shimomura H, Shimamura T, Ohachi T Journal of Crystal Growth, 311(10), 3049, 2009 |