1 |
Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates Asano T, Terashima T, Yamaha T, Kurosawa M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S Solid-State Electronics, 110, 49, 2015 |
2 |
Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 Yamaha T, Kurosawa M, Ohmura T, Takeuchi W, Taoka N, Nakatsuka O, Zaima S Solid-State Electronics, 110, 54, 2015 |
3 |
Atom probe tomography study on Ge1-x - ySnxCy hetero-epitaxial film on Ge substrates Kamiyama E, Sueoka K, Terasawa K, Yamaha T, Nakatsuka O, Zaima S, Izunome K, Kashima K, Uchida H Thin Solid Films, 592, 54, 2015 |
4 |
Characterization of crystalline structures of SiGe substrate formed by traveling liquidus-zone method for devices with Ge/SiGe structures Yamaha T, Nakatsuka O, Taoka N, Kinoshita K, Yoda S, Zaima S Thin Solid Films, 557, 129, 2014 |
5 |
Low temperature formation of Si1-x-yGexSny-on-insulator structures by using solid-phase mixing of Ge1-zSnz/Si-on-insulator substrates Nakatsuka O, Mochizuki K, Shimura Y, Yamaha T, Zaima S Thin Solid Films, 520(8), 3288, 2012 |
6 |
Influence of retarding hydrogen diffusion in boron phosphosilicate glass on annealing damage of metal-oxide semiconductor transistors Yamaha T, Masuoka F Journal of the Electrochemical Society, 146(8), 3065, 1999 |
7 |
Roles of Cap-Metal on via Electromigration Resistance in Aluminum-Based Interconnections Yamaha T, Naito M, Hotta T Journal of the Electrochemical Society, 143(3), 1043, 1996 |
8 |
Electromigration Characteristics of Sputtered Tin/Ti/Alsicu/Tion/Ti Interconnects with Aluminum Reflow Yamaha T, Naito M Journal of the Electrochemical Society, 143(10), 3297, 1996 |
9 |
Enhanced Hot-Carrier Degradation Due to Water-Related Species in Plasma-Enhanced Tetraethoxysilane Oxide Yamaha T, Inoue Y, Fujioka T, Hanagasaki O, Hotta T Journal of the Electrochemical Society, 142(8), 2743, 1995 |
10 |
Field-Inversion Induced by Water from Outside in a Spin-on-Glass Nonetchback Complementary Metal-Oxide-Semiconductor Process Yamaha T, Inoue Y, Hanagasaki O, Hotta T Journal of the Electrochemical Society, 142(9), 3132, 1995 |