검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Multiperiod heating storage control for distributed electric heating considering wind curtailment accommodation Yang YL, Yan GG, Mu G International Journal of Energy Research, 44(1), 205, 2020 |
| 2 |
The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates Yan GG, Liu XF, Shen ZW, Zhao WS, Wang L, Cui YX, Li JT, Zhang F, Sun GS, Zeng YP Journal of Crystal Growth, 507, 175, 2019 |
| 3 |
Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition Liu XF, Yan GG, Shen ZW, Wen ZX, Chen J, He YW, Zhao WS, Wang L, Guan M, Zhang F, Sun GS, Zeng YP Journal of Crystal Growth, 507, 283, 2019 |
| 4 |
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers Yan GG, Liu XF, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Zhang XH, Li XG, Sun GS, Zeng YP, Wang ZG Journal of Crystal Growth, 505, 1, 2019 |
| 5 |
Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition Liu XF, Yan GG, Liu B, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Sun GS, Zeng YP Journal of Crystal Growth, 504, 7, 2018 |
| 6 |
Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates Yan GG, Zhang F, Niu YX, Yang F, Liu XF, Wang L, Zhao WS, Sun GS, Zeng YP Applied Surface Science, 353, 744, 2015 |
| 7 |
Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates Dong L, Sun GS, Yu J, Zheng L, Liu XF, Zhang F, Yan GG, Li XG, Wang ZG Applied Surface Science, 270, 301, 2013 |